| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a wire material for connecting semiconductor devices, which has excellent first bondability and second bondability and also excellent mechanical strength. <P>SOLUTION: This wire material for connecting semiconductor devices is characterized in that nitrides of a group of additive elements are dispersed at the surface of a pure metal, such as gold, silver or copper, a gold-silver alloy, a gold-copper alloy or a gold palladium alloy. It is preferable that the dispersion is done in such a way that the concentration of the group of additive elements is lower on the surface side than in the central part. The nitrides of the group of additive elements are dispersed on the surface side of the wire material by heating treatment in a nitrogen atmosphere. <P>COPYRIGHT: (C)2008,JPO&INPIT |
