发明名称 Intergrated Circuit with Magnetic Memory
摘要 An integrated circuit with magnetic memory has a silicon transistor layer, at least one magnetic memory layer, and a metal routing layer. The silicon transistor layer is arranged to generate several logic operation functions. The magnetic memory layer is arranged to store the data required by the logic operation functions. The metal routing layer has several conducting lines to transmit the data between the silicon transistor layer and the magnetic memory layer.
申请公布号 US2008180993(A1) 申请公布日期 2008.07.31
申请号 US20070669409 申请日期 2007.01.31
申请人 NORTHERN LIGHTS SEMICONDUCTOR CORP. 发明人 LAI JAMES CHYI;AGAN TOM ALLEN
分类号 G11C11/15 主分类号 G11C11/15
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