| 摘要 |
According to an aspect of the embodiment, there is provided a semiconductor light emitting device including: a gallium nitride substrate; a multilayer film of nitride semiconductors provided on the gallium nitride substrate; a first film including a first silicon nitride layer; and a second film including a second silicon nitride layer and a laminated film provided on the second silicon nitride layer. The gallium nitride substrate and the multilayer film have a laser light emitting facet and a laser light reflecting facet. The first silicon nitride layer is provided on the laser light emitting facet. The multilayer film includes a light emitting layer, and the multilayer film has a laser light emitting facet and a laser light reflecting facet. The second silicon nitride layer is provided on the laser light reflecting facet, and the laminated film includes oxide layer and silicon nitride layer which are alternately laminated.
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