Ion beam device for use in semiconductor manufacturing device, has plasma shell control unit e.g. porous material layer, with ion extraction opening that is smaller than ion extraction opening of grid structure

摘要

The device has a grid structure (49) installed at an end of a plasma chamber. A plasma shell control unit (41, 41') is arranged between the plasma chamber and the grid structure. The plasma shell control unit e.g. porous material layer, has an ion extraction opening (41H) that is smaller than an ion extraction opening (49H) of the grid structure. The ion extraction opening (41H) has a breadth that is smaller than a thickness of a plasma shell (40) of the plasma chamber. The plasma shell control unit is formed of a porous metal layer or a porous ceramic layer. An independent claim is also included for a method for supplying an ion beam from a plasma source.