| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that, when a wire formed into a tape shape is ultrasonic-joined like a conventional wiring joining method for a semiconductor device, ultrasonic energy applied to a semiconductor device is increased, and consequently, it is highly likely to damage the semiconductor device. <P>SOLUTION: A wiring joining method for a power semiconductor device 21 is composed as follows. A terminal 21a and a wiring 31 on the surface of the power semiconductor device 21 are laminated while interposing bonding materials 36a/36b between them. The surface of the wiring 31 is irradiated with a laser beam 51 so as to join the terminal 21a with the wiring 31 by locally heating the joint between the terminal 21a and the wiring 31. A relationship between a temperature at the joint and a laser heat input to the joint is calculated beforehand. The laser heat input to the joint by laser irradiation is set so that the temperature at the joint is higher than the melting temperature of the bonding materials 36a/36b and in the range below a heatproof temperature of the power semiconductor device 21 by using the relationship between the temperature at the joint and the laser heat input to the joint. <P>COPYRIGHT: (C)2008,JPO&INPIT |
