发明名称 Semiconductor device having a fuse element
摘要 A semiconductor device includes plural fuse elements that can be disconnected by irradiating a laser beam, lower-layer wirings that are located lower than the use elements, and plural through-hole electrodes for connecting between the fuse elements and the lower-layer wirings. The through-hole electrodes are provided at both ends of the fuse elements in the longitudinal direction, and a plurality of fuse elements are laid out on substantially a straight line in an A direction as a longitudinal direction. Accordingly, at the time of disconnecting a predetermined fuse element, through-hole electrodes connected to this fuse element become a shade, and unnecessary energy of a laser beam is not directly irradiated to other through-hole electrodes.
申请公布号 US2008179707(A1) 申请公布日期 2008.07.31
申请号 US20080010399 申请日期 2008.01.24
申请人 ELPIDA MEMORY, INC. 发明人 OGAWA SUMIO
分类号 H01L23/525 主分类号 H01L23/525
代理机构 代理人
主权项
地址