DUAL CRYSTAL ORIENTATION AND INTERFACE PASSIVATION IN SEMICONDUCTOR DEVICE AND METHOD

摘要

The invention provides, in one aspect, a method of forming a semiconductor device including providing a semiconductor substrate (1005) that comprises a first portion (1015) having a crystal orientation and a second portion (1020) located over the first portion and having a different crystal orientation. An interfacial region is located between the first portion and second portion. A passivating dopant is implanted into the interfacial region to passivate unterminated bonds within the interfacial region.