METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

A method for forming a semiconductor device is provided to prevent a not-open effect of a landing plug contact hole, to reduce a failure rate of a semiconductor device manufacturing process, and to improve electrical characteristics of a gate. An isolation layer for defining an active region(220) is formed on a semiconductor substrate(200) including a cell region and a peripheral circuit region. A gate material layer is formed on the semiconductor substrate. A cell gate(290) is formed by patterning the gate material layer of the cell region. A nitride layer spacer is formed on a sidewall of the cell gate. A landing plug polysilicon layer is buried in a region between the cell gates. A contact hole for separating a landing plug is formed on the isolation layer by shifting a mask for defining a storage electrode contact hole and a bit line contact hole in a short axis direction of the active region. A peripheral circuit gate is formed by patterning the gate material layer of the peripheral circuit region. The contact hole for separating the landing plug is filled with an oxide layer spacer material.