发明名称 PHOTORESISTS COMPRISING NOVOLAK RESIN BLENDS
摘要 A photoresist composition, and a method for forming a photoresist relief image by using the composition are provided to increase dissolution rate and to decrease light velocity. A photoresist composition comprises a radiation sensitive component comprising a diazo-naphthoquinone material; and at least two kinds of different novolac resins, wherein it has a dissolution rate in an aqueous alkali developer is 800Å or more per second. Preferably the novolac resin comprises a cresol reaction product and a reaction product of benzaldehyde and/or salicylaldehyde. A photoresist relief image is formed by coating the composition on a substrate; and exposing and developing the formed photoresist layer.
申请公布号 KR20080070573(A) 申请公布日期 2008.07.30
申请号 KR20080007928 申请日期 2008.01.25
申请人 ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. 发明人 CALVERT JEFFREY M.;LACHOWSKI JOSEPH F.
分类号 G03F7/016 主分类号 G03F7/016
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