发明名称 |
PHOTORESISTS COMPRISING NOVOLAK RESIN BLENDS |
摘要 |
A photoresist composition, and a method for forming a photoresist relief image by using the composition are provided to increase dissolution rate and to decrease light velocity. A photoresist composition comprises a radiation sensitive component comprising a diazo-naphthoquinone material; and at least two kinds of different novolac resins, wherein it has a dissolution rate in an aqueous alkali developer is 800Å or more per second. Preferably the novolac resin comprises a cresol reaction product and a reaction product of benzaldehyde and/or salicylaldehyde. A photoresist relief image is formed by coating the composition on a substrate; and exposing and developing the formed photoresist layer.
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申请公布号 |
KR20080070573(A) |
申请公布日期 |
2008.07.30 |
申请号 |
KR20080007928 |
申请日期 |
2008.01.25 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. |
发明人 |
CALVERT JEFFREY M.;LACHOWSKI JOSEPH F. |
分类号 |
G03F7/016 |
主分类号 |
G03F7/016 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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