| 摘要 |
A mask forming method forms an A mask forming functional layer with an amorphous structure so as to cover an etched body, forms a B mask forming functional layer so as to cover the formed A mask forming functional layer, forms a convex/concave pattern in the formed B mask forming functional layer by carrying out a predetermined process to form a B mask on the A mask forming functional layer, and forms an A mask on the etched body by forming a convex/concave pattern in the A mask forming functional layer by dry etching the A mask forming functional layer using the B mask. By doing so, a convex/concave pattern with extremely small pattern fluctuations can be formed in the A mask forming functional layer. |
