发明名称 |
Inductance and its manufacturing method |
摘要 |
Fabrication of inductance (10) in monolithic circuit made of silicon substrate (11) with plane upper surface comprises: <??>(a) forming a cavity in substrate following the contour of the inductance to be formed, section of the cavity being deeper than its width; <??>(b) forming porous silicon (27) region at the level of the cavity and oxidizing this region of porous silicon; <??>(c) filling cavity with conducting material. <??>An Independent claim is also included for an inductance formed in a monolithic circuit by this method of fabrication. |
申请公布号 |
EP1302955(B1) |
申请公布日期 |
2008.07.30 |
申请号 |
EP20020354158 |
申请日期 |
2002.10.09 |
申请人 |
STMICROELECTRONICS S.A. |
发明人 |
GARDES, PASCAL;AURIEL, GERARD |
分类号 |
H01F41/04;H01L27/04;H01F17/00;H01L21/02;H01L23/64 |
主分类号 |
H01F41/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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