| 摘要 |
A phase change memory device is provided to avoid limitation caused by conventional photolithography resolution by determining a contact area of a phase change material layer and a heating electrode of a ring type by the dimension of the heating electrode. A metal plug(304) and a phase change material layer are formed on a substrate(300). A heating electrode(312a) is formed on the phase change material layer. A conductive layer is formed on the heating electrode. The metal plug is electrically connected to the phase change material layer, and the heating electrode is electrically connected to the phase change material layer. A pillar-type insulation layer can be formed on the phase change material layer, and the heating electrode can be formed on the sidewall of the pillar-type insulation layer.
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