| 摘要 |
A method for forming a storage node of a semiconductor device is provided to prevent the generation of a bridge between storage node contact plugs adjacent to the storage node by forming an etching barrier layer pattern on an upper portion of an etch stop layer. An interlayer dielectric(32) is formed on an upper portion of a substrate(31). A storage node contact plug(33) passes through the interlayer dielectric to be connected to a part of the substrate. An etch stop layer(34) is formed on the interlayer dielectric. An etch barrier layer pattern is formed on a position covering a part of an edge of the storage node contact plug on the etch stop layer. The etch barrier layer pattern is used as a barrier when an etching process is performed to form a storage node hole(39). A storage node dielectric is formed on the etch stop layer including the etch barrier layer pattern. The storage node dielectric and the etch stop layer are etched by using a storage node mask to form the storage node hole.
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