VOLTAGE GENERATING CIRCUIT IN SEMICONDUCTOR MEMORY DEVICE AND USING VOLTAGE SUPPLYING METHOD

摘要

A voltage generating circuit in a semiconductor memory device and a method for supplying a usage voltage are provided to generate a high output voltage by using more than two kinds of external power supply voltages. According to a voltage generating circuit in a semiconductor memory device, a first and a second initialization signal generation part(2,4) generate a first and a second initialization signal in response to a first and a second external power supply voltage with different voltage levels. A high output voltage generation part(5) generates a first and a second high output voltage by driving the first and the second external power supply voltage independently in response to the first and the second initialization signal, and outputs the first and the second high output voltage through a common output stage.