| 摘要 |
An electrostatic chuck of a semiconductor device manufacturing facility is provided to form a ceramic insulator between a deposition ring and a cover ring so as to prevent arching or damage of an electrostatic chuck. A lower electrode(116) is formed at a lower region of a process chamber and receives RF power corresponding to RF power of an upper electrode. An aluminum electrostatic chuck(118) which is mounted with a wafer(W) is formed on the lower electrode. A deposition ring(128), a cover ring(130), and an insulating part(132) are formed at the side of the electrostatic chuck. Aluminum(134) is deposited on the deposition ring.
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