发明名称 |
SECOND SCHOTTKY CONTACT METAL LAYER TO IMPROVE GaN SCHOTTKY DIODE PERFORMANCE |
摘要 |
<p>A Schottky contact (110, 112) is disposed atop a surface of a semiconductor (106). A first Schottky contact metal layer (110) is disposed atop a first portion of the semiconductor surface (106). A second Schottky contact metal (112) is disposed atop a second portion of the surface layer and adjoins the first Schottky contact metal layer (110). The first Schottky contact metal layer (110) has a lower work function than the second Schottky contact metal layer (112).</p> |
申请公布号 |
EP1949445(A2) |
申请公布日期 |
2008.07.30 |
申请号 |
EP20060837446 |
申请日期 |
2006.11.13 |
申请人 |
VELOX SEMICONDUCTOR CORPORATION |
发明人 |
ZHU, TING, GANG;PABISZ, MAREK |
分类号 |
H01L29/47 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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