| 摘要 |
A conventional semiconductor device has a problem that power-conversion energy efficiency in a DC-DC converter circuit is influenced by MOSFET characteristics. In a semiconductor device of the present invention, three MOSFET elements are fixed onto a die pad. Moreover, source electrodes of the MOSFET elements are commonly connected to one another with a conductive plate. Furthermore, drain electrodes of the MOSFET elements are commonly connected to one another. Meanwhile, gate electrodes of the MOSFET elements are individually connected. This structure allows the MOSFET elements to be individually driven according to purposes. |
