发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device is provided to assure the reliability of pullup operation of a sense amplifier by preventing the variation of a normal drive voltage level due to over-driving. A driver(20) outputs a drive signal, and over-drives the drive signal with an over drive voltage higher than a normal drive voltage, and normal-drives the drive signal with the normal drive voltage. A drive voltage control part(30) compensates the normal drive voltage variation due to the previous over-driving during the normal driving by detecting the level of the over drive voltage. The drive voltage control part controls the normal drive voltage to have a target level, by controlling discharge of the normal drive voltage in correspondence to the detection result of the over drive voltage during the normal driving period.
申请公布号 KR100849074(B1) 申请公布日期 2008.07.30
申请号 KR20070091765 申请日期 2007.09.10
申请人 HYNIX SEMICONDUCTOR INC. 发明人 BYEON, SANG JIN
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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