Method for removal of bulk metal contamination from III-V semiconductor substrates

摘要

The present invention provides a single step method for removing bulk metal contamination from III-V semiconductor substrates. The method comprises immersing a metal contaminated III-V semiconductor substrate in a mixture of sulfuric acid and peroxide with a volume ratio x:y H 2 SO 4 :H 2 O 2 , with x being between 3 and 9 and y being 1. After treating the III-V semiconductor substrates with the method according to embodiments of the present invention, the bulk metal contamination may substantially completely be removed from the substrate while a surface roughness of the substrate after treatment of below 0.5 nm RMS (2 µm x 2 µm) is obtained. The present invention furthermore provides a method for manufacturing a semiconductor device using the method for removing bulk metal contamination according to embodiments of the invention before performing processing steps for forming the semiconductor device.