| 摘要 |
Disclosed herein is a high-efficiency solar cell. More specifically, provided is a solar cell comprising a first conductivity type semiconductor substrate, a second conductivity type semiconductor layer formed on the first conductivity type semiconductor substrate and having a conductivity type opposite to that of the substrate, a p-n junction at an interface therebetween, a rear electrode in contact with at least a portion of the first conductivity type semiconductor substrate, a front electrode in contact with at least a portion of the second conductivity type semiconductor layer, and a silicon oxynitride passivation layer and a silicon nitride anti-reflective layer sequentially formed on a rear surface of the first conductivity type semiconductor substrate and/or a front surface of the second conductivity type semiconductor layer; and a process for preparing the same. Therefore, the solar cell according to the present invention can improve a photoelectric conversion efficiency by minimizing a reflectivity of absorbed light via provision of a dual reflective film structure composed of the passivation layer and anti-reflective layer, simultaneously with effective prevention of carrier recombination occurring at a semiconductor surface by the passivation layer. Further, the present invention enables a significant reduction of production costs by mass production capability via in situ continuous formation of the dual reflective film structure. |
