发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 A substrate processing apparatus is provided to introduce process gas into a process chamber while an introduction pipe for introducing the process gas isn't connected to an upper cover, by forming an introduction path for introducing the process gas in the process chamber. An upper cover(35) of a substrate processing apparatus includes a gas supply part for supplying process gas to the inside of a process chamber, and one end of the upper cover is connected to the gas supply part so that a first gas introduction hole(40) for introducing the process gas to a corresponding gas supply part is formed in the upper cover. One end of a process receptacle(33) for receiving a substrate is connected to a supply source of the process gas so that a second gas introduction hole(42) for introducing the corresponding process gas from a corresponding supply source is formed in the process receptacle. When the upper cover gears with the process receptacle, the other end of the first gas introduction hole is connected to the other end of the second gas introduction hole. A first temperature adjust unit(41) adjusts the temperature of the upper cover, and a second temperature adjust unit(45) adjusts the temperature of the process receptacle.
申请公布号 KR20080070560(A) 申请公布日期 2008.07.30
申请号 KR20080007626 申请日期 2008.01.24
申请人 TOKYO ELECTRON LIMITED 发明人 HAYASHI DAISUKE
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
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