INTEGRATED CIRCUIT USING COMPLEMENTARY JUNCTION FIELD EFFECT TRANSISTOR AND MOS TRANSISTOR IN SILICON AND SILICON ALLOYS,申请号EP20060844229-传众专利搜索

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发明名称	INTEGRATED CIRCUIT USING COMPLEMENTARY JUNCTION FIELD EFFECT TRANSISTOR AND MOS TRANSISTOR IN SILICON AND SILICON ALLOYS
摘要
申请公布号	EP1949456(A2)	申请公布日期	2008.07.30
申请号	EP20060844229	申请日期	2006.10.30
申请人	DSM SOLUTIONS, INC.	发明人	KAPOOR, ASHOK K.
分类号	H01L27/11;H01L21/225;H01L21/337;H01L29/45	主分类号	H01L27/11
代理机构		代理人
主权项
地址

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