| 摘要 |
A film forming method of an SrTiO3 film is provided to carry out gasification of material at less than 200°C, to obtain uniform composition in the film, and to secure high throughput and high coverage which is effective for an electrode of a capacitor of an MIM(Metal Insulator Metal) structure. A film forming device(100) includes a cylindrical or box shaped process vessel(1). A mounting device(3) is mounted with a semiconductor wafer(W). A dividing wall(13) is formed at the outer perimeter of the mounting device. A curved part(14) is formed by bending the dividing wall horizontally. An inert gas purge room(15) is formed at the inside of the mounting device. Connection rods(12) are inserted into gaps. The mounting device is supported by a support arm(4). An L shaped lifter pin(5) is projected upward from a ring shaped support member(6). The support member is lifted up and down by a lifting rod(7). The lifting rod is moved up and down by an actuator(10). An inserted part of the lifting rod is covered by a bellows(9). A second gas purging gap(18) is formed at an edge of a clamp ring. An inert gas supply device(19) is installed at the bottom part of the process vessel. The gas supply device has a gas nozzle(20), an Ar gas supply source(21), and a gas pipe(22). The gas pipe has a mass flow controller(23) and opening and closing valves(24,25).
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