发明名称 Semiconductor device having a resistance for equalizing the current distribution
摘要 A first insulating substrate is formed on a heat sink, and a semiconductor element is formed thereon. An insulating resin casing is formed so as to cover the first insulating substrate and the semiconductor element. A second insulating substrate is mounted inside the insulating resin casing apart from the first insulating substrate. On the second insulating substrate, a resistance element that functions as a gate balance resistance is fixed by soldering. The second insulating substrate on which the resistance element was thus mounted was made apart from the first insulating substrate on which the semiconductor element was mounted, and was mounted on the side of the insulating resin casing.
申请公布号 US7405448(B2) 申请公布日期 2008.07.29
申请号 US20060538232 申请日期 2006.10.03
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 KOGA MASUO;MIZOSHIRI TETSUO;HAYASHIDA YUKIMASA
分类号 H01L23/62;H01L21/00;H05K7/20 主分类号 H01L23/62
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