Antireflective hardmask composition and methods for using same

摘要

Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer component including at least one polymer having a monomeric unit of Formula (I) wherein R₁ and R₂ may each independently be hydrogen, hydroxyl, C_1-10 alkyl, C_6-10 aryl, allyl, or halo; R₃ and R₄ may be each independently be hydrogen, a crosslinking functionality, or a chromophore; R₅ and R₆ may each independently be hydrogen or an alkoxysiloxane having the structure of Formula (II), wherein at least one of R₅ and R₆ is an alkoxysilane; wherein R₈, R₉, and R₁₀ may each independently be a hydrogen, alkyl, or aryl; and x is 0 or a positive integer; R₇ may be hydrogen, C_1-10 alkyl, C_6-10 aryl, or allyl; and n is a positive integer; (b) a crosslinking component; and (c) an acid catalyst.