METHOD OF FORMING A SEMICONDUCTOR DEVICE

摘要

A method for forming a semiconductor device is provided to form temperatures of nitride layer patterns in two stages in order to fill gaps without void and to restrict pitting induction when forming a gate electrode. Upper parts of a second silicon nitride layer, a first silicon nitride layer, and a second silicon layer are removed by a chemical and mechanical polishing process or an etch back process to expose an upper surface of a first nitride layer pattern(110) and to form a second silicon layer pattern(122), a first silicon nitride layer pattern(124), and a second silicon nitride layer pattern(126) in a first opening. The first silicon nitride layer pattern and the second silicon nitride layer pattern have a third nitride layer pattern(125). The first nitride layer pattern, the third nitride layer pattern, and the second silicon layer pattern are agitated on a first silicon layer(106). A second pas oxide layer(104) is formed on the substrate. First silicon layer patterns are formed on an active region and a field region(102) of the cell region.