发明名称 |
Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates |
摘要 |
A semiconductor structure is disclosed that includes a silicon carbide wafer having a diameter of at least 100 mm with a Group III nitride heterostructure on the wafer that exhibits high uniformity in a number of characteristics. These include: a standard deviation in sheet resistivity across the wafer less than three percent; a standard deviation in electron mobility across the wafer of less than 1 percent; a standard deviation in carrier density across the wafer of no more than about 3.3 percent; and a standard deviation in conductivity across the wafer of about 2.5 percent.
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申请公布号 |
US7405430(B2) |
申请公布日期 |
2008.07.29 |
申请号 |
US20050149664 |
申请日期 |
2005.06.10 |
申请人 |
CREE, INC. |
发明人 |
SAXLER ADAM WILLIAM;HUTCHINS EDWARD LLOYD |
分类号 |
H01L29/15 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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