发明名称 |
Method and apparatus for treating wafer edge region with toroidal plasma |
摘要 |
Method and apparatus for treating an edge region of a wafer. A toroidal shaped plasma cavity has an inner diameter which is slightly less than the diameter of the wafer being treated so that only the edge region of the wafer extends into the toroidal plasma cavity. An inert gas is flowed across a front and back side of the wafer into the plasma cavity. A reactive gas is flowed directly into the plasma cavity. The gases exit the plasma cavity without flowing over the surface of the wafer.
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申请公布号 |
US7404874(B2) |
申请公布日期 |
2008.07.29 |
申请号 |
US20040710226 |
申请日期 |
2004.06.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AMERICA WILLIAM GEORGE;JOHNSTON STEVEN HILTON |
分类号 |
C23C16/00;B08B7/00;B44C1/22;C23F1/00;H01J37/32;H01L21/00;H01L21/306 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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