发明名称 |
Light-emitting semiconductor device having an overvoltage protector |
摘要 |
An LED includes a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating light. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. A reflector of electroconductive material is formed on the other major surface of the semiconductor region for reflecting the light back toward the light-emitting surface of the semiconductor region. For protecting the LED against breakdown from overvoltages, a zener diode is employed which takes the form of a baseplate having two semiconductor regions of opposite conductivity types sandwiched between a pair of electrodes in the form of metal layers. The protector baseplate is integrated with the light-generating semiconductor region by joining one of the metal layers to the reflector under heat and pressure, thus serving as both mechanical support and overvoltage protector for the LED.
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申请公布号 |
US7405431(B2) |
申请公布日期 |
2008.07.29 |
申请号 |
US20050225837 |
申请日期 |
2005.09.13 |
申请人 |
SANKEN ELECTRIC CO., LTD. |
发明人 |
AOYAGI HIDEKAZU;MATSUO TETSUJI |
分类号 |
H01L27/15;H01L33/10;H01L33/14;H01L33/32;H01L33/34;H01L33/40 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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