发明名称 Method of manufacturing a semiconductor device and electronic equipment
摘要 Exemplary embodiments of the present invention provide a method of manufacturing a semiconductor device that can take a connection between layers without giving damage to a layer, which is underlying. The semiconductor device includes forming conductive members Ms and Md at a predetermined position of a semiconductor film, forming an insulating film on a whole surface of a substrate excluding the conductive members Ms and Md, and forming a conductive film that is connected to the semiconductor film with the conductive member Ms and Md.
申请公布号 US7405134(B2) 申请公布日期 2008.07.29
申请号 US20050065126 申请日期 2005.02.24
申请人 SEIKO EPSON CORPORATION 发明人 YUDASAKA ICHIO;TANAKA HIDEKI
分类号 H01L21/00;H01L21/288;H01L21/20;H01L21/336;H01L21/768;H01L29/04;H01L29/786 主分类号 H01L21/00
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