NONVOLATILE MEMORY DEVICE HAVING BURIED TYPE SPLIT GATE AND METHOD OF FABRICATING THE SAME

摘要

A nonvolatile memory device having a buried type split gate and a method for fabricating the same are provided to embed floating gates in trenches for precluding misalignment between the floating gates and active regions, thereby preventing mismatching of program/erasing characteristics between cells. A semiconductor substrate(200) has an active region. A pair of trenches(210) are separated from the active region. Coupling insulating layers(230) are formed in the trenches. Floating gates(240) are arranged on the coupling insulating layers. A source region(270) is formed at the active region. A pair of drain regions(280) are separated from the trenches respectively. A tunneling insulating layer(250) is formed on the floating gates and the substrate. A control gate(260) is formed on the tunneling insulating layer. Gate spacers(290) are formed at the side walls of the control gate.