PHASE CHANGE RANDOM ACCESS MEMORY COMPRISING PHASE CHANGE MATERIAL LAYER FORMED BY SELECTIVE GROWTH METHOD AND METHOD OF MANUFACTURING THE SAME

摘要

A phase change memory device having a phase change layer formed by selective growth and a method of manufacturing the same are provided to grow firstly a phase change layer and to form an insulating layer around the grown phase change layer for preventing the seam or void from being formed on the phase change layer. First and second impurity regions(12,14) are formed on a semiconductor(10). A gate laminate(20) is formed on the substrate between the impurity regions. The gate laminate includes a gate insulating layer(18) and a gate electrode(19). A channel region(16) is formed below the gate laminate. A first interlayer insulating layer(22) covers a transistor. A first contact hole(h1) is formed on the first interlayer insulating layer. The first contact hole is filled with a conductive plug(24). A lower electrode(30) is formed on the first interlayer insulating layer. The lower electrode is a TiN or TiAlN electrode. A second interlayer insulating layer(32) covers the lower electrode. A second contact hole(h2) is formed on the second interlayer insulating layer. The second contact hole is filled with a lower electrode contact hole(34). A seed layer(36) is formed on the second interlayer insulating layer. A phase change layer(38) is formed on the seed layer. The seed layer and the phase change layer are surrounded by an insulating layer(40).