| 摘要 |
A semiconductor memory device and a write method thereof are provided to reduce write time of additional write operation, and to reduce fabrication cost thereof. A memory cell array includes a page comprising a plurality of memory cells having a control electrode, and comprises a plurality of memory cell columns connected to a current path of the memory cells. A bit line is electrically connected to one end of the current path of the memory cell column. A source line is electrically connected to the other end of the current path of the memory cell column. A sense amplifier(18) is installed in each bit line, and comprises a plurality of sense amplifier circuits capable of reading data written in the memory cell. A data buffer is installed in each bit line, and is electrically connected to the sense amplifier circuit, and comprises a plurality of first latch circuits. A voltage generation circuit(21) generates a write voltage. A control circuit(22) controls the voltage generation circuit and the data buffer.
|
