| 摘要 |
A method for removing a defect on the back surface of a wafer during a semiconductor cleaning process is provided to improve process reliability by effectively removing contaminant remaining on the back surface of a wafer during a rough etch process. Dilute hydrofluoric acid in which etchant and water is mixed in a ratio of 10:1-50:1 is used in a rough etch process(S6). Mixture acid including phosphoric acid, sulfuric acid, hydrofluoric acid and nitric acid is used. Dilute hydrofluoric acid in which hydrofluoric acid and water are mixed in a ratio of 10:1-50:1 is used. The dilute hydrofluoric acid can be used at a temperature of 25 °C.
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