| 摘要 |
A metal polishing agent is provided to solve the problem related to dicing during polishing, while not adversely affecting the polishing rate to copper, to realize excellent copper/tantalum polishing selectivity, and to improve the surface quality after polishing. A metal polishing agent used for chemical mechanical polishing of a conductor film formed of copper or an alloy thereof during the fabrication of a semiconductor device, comprises: (a) an amino acid derivative represented by the following formula I(wherein R1 is a C1-C4 alkyl); (b) colloidal silica whose surface silicon atoms are at least partially modified with aluminum atoms; and (c) an oxidizing agent. The amino acid derivative includes N-methylglycine or N-ethylglycine.
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