ETCHANT COMPOSITION FOR PATTERNING CIRCUITS IN THIN FILM TRANSISTOR-LIQUID CRYSTAL DEVICES

摘要

An etchant composition for patterning circuits in thin film transistor liquid crystal device is provided to etch a metal composition layer such as Mo/AL bi-layer, an ITO and an IZO transparent conductive film for pixel electrode by the wet etching process at one time to obtain outstanding tapered etching profile. An etchant composition for patterning circuits in thin film transistor liquid crystal device comprises 1 to 10wt% of ferric nitrate Fe(NO3)2, 2 to 20wt% of sulfate including sulfuric acid, 0.01 to 5 wt% of a fluorinated compound, 0 to 3wt% of etching control agents and water corresponds to the remainder from the sum of the weight ratio of the components.