发明名称 FLIP CHIP BONDING DEVICE AND METHOD FOR FABRICATING THEREOF
摘要 A flip chip bonding device and a method for manufacturing the same are provided to embody a metal/insulation layer interface or a metal/semiconductor interface by removing only polyimide under a metal contact of a p-contact and an n-contact. A flip chip bonding device includes a semiconductor substrate(101), a flip chip boding pad(116), a planarizing polyimide, an insulation layer(110), and a metal contact. The flip chip bonding pad is formed on the semiconductor substrate, and other devices are optically coupled with the flip chip boding pad. The insulation layer is formed on the semiconductor substrate. The metal contact is formed on the insulation layer. The flip chip bonding pad is formed on the metal contact. The semiconductor substrate is a semi-insulating substrate. The flip chip bonding device is a vertical resonance surface release laser device.
申请公布号 KR20080069015(A) 申请公布日期 2008.07.25
申请号 KR20070006586 申请日期 2007.01.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 RHEE, DO YOUNG;LEE, EUN HWA
分类号 H01L21/30 主分类号 H01L21/30
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