发明名称 NANODOT ELECTROLUMINESCENT DIODE OF TANDEM STRUCTURE AND PRODUCING METHOD OF THE SAME
摘要 A nano dot light emitting diode of a tandem structure and a method for manufacturing the same are provided to improve thermal and mechanical stability by using a nano dot. A nano dot light emitting diode of a tandem structure includes a lower electrode(10), a upper electrode(20), a first unit cell(100), a second unit cell(200), and a third unit cell(300). Each of the first unit cell, the second unit cell, and the third unit cell includes a quantum dot emission layer and at least one selected from an organic layer and an inorganic layer. The organic layer and the inorganic layer of the unit cell includes at least one of a hole injection layer and a hole transport layer. The organic layer and the inorganic layer of the unit cell include at least one of an electron injection layer and an electron transport layer.
申请公布号 KR20080069085(A) 申请公布日期 2008.07.25
申请号 KR20070006725 申请日期 2007.01.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, KYUNG SANG;CHOI, BYOUNG LYONG;KWON, SOON JAE
分类号 H01L33/06;H01L33/08;H01L33/28;H01L33/34 主分类号 H01L33/06
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