METHOD OF FORMING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to improve dispersion of a turn-on current of an upper transistor and to prevent gate stringer caused by remainder due to undercut. A method for manufacturing a semiconductor device comprises the steps: forming an interlayer insulation film(110) on a semiconductor substrate(100); forming a seed plug(104) which is connected to the semiconductor substrate by penetrating the interlayer insulation film; forming a mold pattern(112a) having an opening unit(113) exposing the seed plug on the interlayer insulation film; and forming a crystallized semiconductor pattern filling the opening unit.