| 摘要 |
A fin field effect transistor and a method for manufacturing the same are provided to improve an operation performance by increasing a drain current. A pin field effect transistor includes a silicon substrate(110), an insulation layer(120), a first injection(130), and a second injection(140). The silicon substrate has a first active region and a second active region. The insulation layer is formed on the silicon substrate. The first projection is formed on the insulation layer in the first active region. The second projection is formed in the second active region. The first projection includes a fin(131), fin spacers(133), and conductive layers. The fin is formed on the insulation layer to extend to a longitudinal direction of the first active region. The fin spacers are formed on the insulation layer to be spaced apart from both sides of the fin. The conductive layers are embedded in trenches, which are formed between the both sides of the fin and the fin spacers.
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