| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method of a group III nitride crystal capable of accurately measuring the dislocation density for each of various dislocation types, i.e., screw dislocation, mixed dislocation and edge dislocation in the surface of the group III nitride crystal. SOLUTION: In this evaluation method of the group III nitride crystal, etch pits 11p, 12p, 13p are formed in the surface 10s of the group III nitride crystal 10 by etching, and the surface 10s having the etch pits 11p, 12p, 13p formed therein is observed by means of cathode luminescence, thereby measuring the screw dislocation density, the mixed dislocation density and the edge dislocation density in the surface 10s. COPYRIGHT: (C)2008,JPO&INPIT
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