| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device to which distortion silicon technology can effectively be introduced while the occurrence of junction leakage current is suppressed and to provide a manufacturing method of the device. SOLUTION: The semiconductor device is provided with a semiconductor substrate, an element separation region which is formed in the semiconductor substrate and demarcates an element forming region, a gate electrode formed on a part of the semiconductor substrate in the element forming region through a gate electrode, a channel region formed below the gate electrode of the semiconductor substrate, a distortion granting layer which is epitaxially grown in the element forming region between the channel region and the element separation region and grants distortion to the channel region, a silicide layer formed on the distortion granting layer, a modified layer of the semiconductor substrate, which is formed below a base of the distortion granting layer adjacent to the element separation region so that it is installed between the silicide layer and the semiconductor substrate near the element separation region, and a source/drain region formed at least in the distortion granting layer and in the modified layer near the element separation region. COPYRIGHT: (C)2008,JPO&INPIT
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