SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a plurality of thin-film transistors having a different threshold voltage which are fabricated by using a polycrystalline semiconductor film grown laterally in a specific direction. SOLUTION: The semiconductor device includes a first thin-film transistor fabricated by using a first crystalline semiconductor layer 14 grown laterally in a specific direction and a second thin-film transistor fabricated by using a second crystalline semiconductor layer 18 grown laterally in a specific direction. The crystal growing direction 10 of the first crystalline semiconductor layer 14 and the channel direction 15 of the first thin-film transistor form an angle of±10°or less, and the crystal growing direction 10 of the second crystalline semiconductor layer 18 and the channel direction 19 of the second thin-film transistor form an angle not less than 80°nor more than 100°. COPYRIGHT: (C)2008,JPO&INPIT