| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which enables heavy doping of P, does not have crystal defects, requires short processing time, and improves the throughput. SOLUTION: In the method of manufacturing the semiconductor device, a substrate 3 having a silicon surface on the surface is stored in a treatment chamber 17 and the ambient temperature inside the treatment chamber and the substrate are heated up to a predetermined temperature and an epitaxial film is formed on the silicon surface. This manufacturing method includes a process of carrying the substrate into the treatment chamber, a process of heating up the substrate and the ambient temperature inside the treatment chamber to the predetermined temperature between 400°C and 600°C; and a gas supplying process of supplying a desired gas into the treatment chamber. In the gas supplying process, Si2 H6 or Si3 H8, and PH3 which are dopant gases are supplied into the treatment chamber, to form the epitaxial film doped with phosphorus at the concentration of 1E20 or above on the silicon plane. COPYRIGHT: (C)2008,JPO&INPIT
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