| 摘要 |
PROBLEM TO BE SOLVED: To reduce the thermal fluctuation of a storage cell, and to stably achieve a writing operation when using a flux reversal process utilizing no reversal field in writing to a memory cell. SOLUTION: A magnetic memory element has a structure in which a first magnetization fixing terminal 13 and a second magnetization fixing terminal 14 are connected apart from one surface of a non-magnetic region 11, and a magnetization-free terminal 15 is connected to the other surface. The direction of the magnetization of the first magnetization fixing terminal and that of the second magnetization fixing terminal are antiparallel. The writing is conducted by reversing the magnetization of the magnetization-free terminal by controlling the polarity of a current made to flow between the first magnetization fixing terminal and the second magnetization fixing terminal through the non-magnetic region. Magnetoresistance generated accompanied by the change of the direction of relative magnetization between the first magnetization fixing terminal and the magnetization-free terminal is detected and read. COPYRIGHT: (C)2008,JPO&INPIT
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