发明名称 VACUUM DEPOSITION SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a vacuum deposition system where the individual vapor deposition rates of materials vaporized from a plurality of evaporation sources can be correctly measured, and the concentration ratio of co-vapor deposition can be correctly controlled. SOLUTION: Regarding the vacuum deposition system where a plurality of evaporation sources 2 and the body 3 to be vapor-deposited are arranged in a vacuum chamber 1, and further, a space between each evaporation source 2 and the body 3 to be vapor-deposited is surrounded by a heated cylindrical body 4, the vacuum deposition system comprises: each connecting tube part 12 connecting each evaporation source 2 with the inside of the cylindrical body 4 individually; each throttling part 13 narrowing the inside diameter of each connecting tube part 12; each opening/closing means 6 capable of regulating the opening degree of the inner circumference of each connecting tube part 12 through which materials 9 vaporized from the evaporation sources 2 pass; each individual vapor deposition thickness measurement means 7 vapor-depositing the materials 9 vaporized from the evaporation sources 2 and measuring the vapor deposition thickness thereof; and an opening/closing controlling means 8 regulating the opening degree of each opening/closing means 6 in each connecting tube part 12. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008169456(A) 申请公布日期 2008.07.24
申请号 JP20070006241 申请日期 2007.01.15
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 NISHIMORI TAISUKE;MIYAI TAKAO
分类号 C23C14/24 主分类号 C23C14/24
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