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发明名称
Non-volatile resistance changing for advanced memory applications
摘要
A resistance changing memory unit cell includes a resistance changing memory element coupled to a sense bit line and a diode coupled to the resistance changing memory element.
申请公布号
US2008175035(A1)
申请公布日期
2008.07.24
申请号
US20070724788
申请日期
2007.03.16
申请人
SPANSION LLC
发明人
TAGUCHI MASAO
分类号
G11C11/00;G11C7/00
主分类号
G11C11/00
代理机构
代理人
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