发明名称 |
METHOD OF PURIFYING METALLURGICAL SILICON BY DIRECTIONAL SOLIDIFICATION |
摘要 |
The method is used to purify metallurgical silicon (3) by directional solidification to obtain solar or photovoltaic-grade silicon (6). A crystallization step uses at least one silicon seed (2), preferably of solar grade (6) or even microelectronic grade, having, for example, a purity that is substantially equal to or greater than a predetermined purity of the solar-grade silicon (6). The silicon seed (2) which covers the bottom of the crucible can come from a previous crystallization or be made up of a silicon wafer. The use of a textured single crystal or multi-crystal seed (2) enables the crystallographic orientation of the solar-grade silicon (6). A solid metallurgical silicon intermediate layer can be arranged on the silicon seed (2) and a metallurgical silicon load (3) is arranged on the intermediate layer. |
申请公布号 |
WO2008065270(A3) |
申请公布日期 |
2008.07.24 |
申请号 |
WO2007FR01818 |
申请日期 |
2007.11.02 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;SERVANT, FLORENCE;CAMEL, DENIS;DREVET, BEATRICE |
发明人 |
SERVANT, FLORENCE;CAMEL, DENIS;DREVET, BEATRICE |
分类号 |
C01B33/037;C30B11/14;C30B29/06;H01L31/18 |
主分类号 |
C01B33/037 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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