| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase a packaging density in a laminated structure type semiconductor device. <P>SOLUTION: The semiconductor device has at least one semiconductor element 21 loaded on a circuit board 10, bump electrodes 12 formed on at least one electrode pad 11 disposed on the circuit board 10 and the bump electrodes 23 formed on at least one electrode pad 22 of the semiconductor element 21. The semiconductor device further has an insulating layer 30 coating the side faces of the bump electrodes 12 and the bump electrodes 23 and being formed on the circuit board 10 and the semiconductor element 21 and wiring layers 32 disposed on the insulating layer 30 and electrically connected to the wiring layers 31 electrically connected to the bump electrodes 12 and the bump electrodes 23. The heights of the bump electrodes 12 and the bump electrodes 23 formed in the insulating layer 30 are equalized. Accordingly, a metallic wire need not be drawn around in the insulating layer 30, thus increasing the packaging density of the semiconductor device 1. <P>COPYRIGHT: (C)2008,JPO&INPIT |
