| 摘要 |
PROBLEM TO BE SOLVED: To form a p-type group III nitride semiconductor on a desired region. SOLUTION: An SiO<SB>2</SB>film 12 is formed on an n<SP>-</SP>-GaN layer 11, and the SiO<SB>2</SB>film 12 on a region where a p-GaN is to be formed is removed (Fig. 1a). A p-GaN layer 13 doped with Mg highly densely is selectively grown using the SiO<SB>2</SB>film 12 as a mask by an MOCVD method (Fig. 1b), and then, the SiO<SB>2</SB>film 12 is removed (Fig. 1c). An n<SP>-</SP>-GaN layer 11 is regrown on the upper surface of the n<SP>-</SP>-GaN layer 11 and the upper surface of the p-GaN layer 13 by an MOCVD method. In this case, Mg is diffused into a region of the upper n<SP>-</SP>-GaN layer 11 from the lower p-GaN layer 13 together with the regrowth of the n<SP>-</SP>-GaN layer 11. As the result, a p-type region 14 is formed on the region of the n<SP>-</SP>-GaN layer 11 over the p-GaN layer 13 (Fig. 1d). COPYRIGHT: (C)2008,JPO&INPIT
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